Vishay SiR N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SIR512DP-T1-RE3

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RS庫存編號:
735-131
製造零件編號:
SIR512DP-T1-RE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

96.2W

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

7mm

Width

6mm

Height

2mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel TrenchFET Gen V power MOSFET designed for efficient power management in AI server solutions and high-current applications. It delivers 100V drain-source voltage capability with a low on-resistance of 4.5 mΩ at 10V gate drive for minimal power loss.

00A continuous drain current at TC=25°C

96.2W power dissipation rating

-55°C to +150°C operating temperature range

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