Vishay SiR N channel-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP
- RS庫存編號:
- 735-140
- 製造零件編號:
- SiR626DP
- 製造商:
- Vishay
N
可享批量折扣
小計（1 件）*
HK$27.62
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年9月11日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$27.62 |
| 10 - 24 | HK$18.00 |
| 25 - 99 | HK$9.39 |
| 100 - 499 | HK$9.17 |
| 500 + | HK$8.95 |
* 參考價格
- RS庫存編號:
- 735-140
- 製造零件編號:
- SiR626DP
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0017Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 60V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2mm | |
| Length | 7mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiR | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0017Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 60V | ||
Maximum Operating Temperature 150°C | ||
Height 2mm | ||
Length 7mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
52nC typical total gate charge for fast switching
Low RDS(on) x Qg figure-of-merit
15°C/W maximum junction-to-ambient thermal resistance
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