Vishay SiR N-Channel MOSFET, 518 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SIRS4302DP-T1-GE3
- RS庫存編號:
- 735-148
- 製造零件編號:
- SIRS4302DP-T1-GE3
- 製造商:
- Vishay
N
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HK$29.74
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|---|---|
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* 參考價格
- RS庫存編號:
- 735-148
- 製造零件編號:
- SIRS4302DP-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 518A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00057Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 153nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Forward Voltage Vf | 30V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Height | 2mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 518A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiR | ||
Package Type PowerPAK SO-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00057Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 153nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Forward Voltage Vf 30V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Height 2mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
87A continuous drain current at TA=25°C
Low RDS(on) x Qg figure-of-merit for superior switching performance
100% Rg and UIS tested construction
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