Vishay SiD N-Channel MOSFET, 148 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SIDR510EP-T1-RE3
- RS庫存編號:
- 735-163
- 製造零件編號:
- SIDR510EP-T1-RE3
- 製造商:
- Vishay
可享批量折扣
查看批量定價選項小計（1 件）*
HK$37.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年11月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | HK$37.50 |
| 10 - 24 | HK$24.40 |
| 25 - 99 | HK$23.40 |
| 100 - 499 | HK$22.70 |
| 500 + | HK$22.00 |
* 參考價格
- RS庫存編號:
- 735-163
- 製造零件編號:
- SIDR510EP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 148A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiD | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0036Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 100V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Length | 7mm | |
| Height | 2mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 148A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiD | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0036Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 100V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Length 7mm | ||
Height 2mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
94A continuous drain current at TA=25°C
54.3nC typical total gate charge for fast switching
-55°C to +175°C extended junction temperature range
相关链接
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR510EP-T1-RE3
- Vishay SiD N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIDR402EP-T1-RE3
- Vishay SiD N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SIDR5802EP-T1-RE3
- Vishay SiD N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIDR626EP-T1-RE3
- Vishay SiD N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SIDR500EP-T1-RE3
- Vishay N-Channel MOSFET 80 V PowerPAK SO-8 SIR120DP-T1-RE3
- Vishay SiR N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay SiRA N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3