Vishay SiD N-Channel MOSFET, 291 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIDR402EP-T1-RE3
- RS庫存編號:
- 735-145
- 製造零件編號:
- SIDR402EP-T1-RE3
- 製造商:
- Vishay
N
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HK$28.07
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- 從 2027年10月04日 發貨
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|---|---|
| 1 - 9 | HK$28.07 |
| 10 - 24 | HK$18.23 |
| 25 - 99 | HK$9.62 |
| 100 - 499 | HK$9.28 |
| 500 + | HK$9.06 |
* 參考價格
- RS庫存編號:
- 735-145
- 製造零件編號:
- SIDR402EP-T1-RE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 291A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiD | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00088Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 40V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6mm | |
| Standards/Approvals | RoHS | |
| Length | 7mm | |
| Height | 2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 291A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8 | ||
Series SiD | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00088Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 40V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 175°C | ||
Width 6mm | ||
Standards/Approvals RoHS | ||
Length 7mm | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, engineered for high-efficiency synchronous rectification in AI power server DC/DC converters. It provides ultra-low on-resistance around 0.88mΩ at 10V gate drive to minimize conduction losses in high-current power stages.
65A continuous drain current at TA=25°C
Low RDS(on) x Qg figure-of-merit for optimal switching
Material categorization qualification for reliability
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