Vishay SIEH3812EW N-Channel MOSFET, 322 A, 80 V Enhancement, 8-Pin PowerPAK 8 x 8 SIEH3812EW-T1-GE3

可享批量折扣
查看批量定價選項

小計(1 組,共 1 件)*

HK$65.19

Add to Basket
選擇或輸入數量
暫時缺貨
  • 從 2027年11月17日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

膠帶
每膠帶
1 - 9HK$65.19
10 - 49HK$40.37
50 - 99HK$31.31
100 +HK$21.13

* 參考價格

RS庫存編號:
736-346
製造零件編號:
SIEH3812EW-T1-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

322A

Maximum Drain Source Voltage Vds

80V

Series

SIEH3812EW

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00175Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

417W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

154nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

8mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay Power MOSFET delivers exceptional performance in high-efficiency applications, featuring an N-Channel design that supports significant continuous drain current, Ideal for Advanced energy management solutions.

Fully lead (Pb)-free and halogen-free construction for environmental compliance

Tested at 100% for R and UIS to guarantee reliability

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。