Infineon CoolSiC N-Channel Power MOSFET, 111 A, 440 V Enhancement, 8-Pin TO-LL IMT44R015M2HXTMA2
- RS庫存編號:
- 762-915
- 製造零件編號:
- IMT44R015M2HXTMA2
- 製造商:
- Infineon
N
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HK$124.10
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$124.10 |
| 10 - 24 | HK$111.70 |
| 25 + | HK$91.80 |
* 參考價格
- RS庫存編號:
- 762-915
- 製造零件編號:
- IMT44R015M2HXTMA2
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 440V | |
| Series | CoolSiC | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 4.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 11.88mm | |
| Width | 2.4mm | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 440V | ||
Series CoolSiC | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 4.3V | ||
Maximum Operating Temperature 175°C | ||
Height 11.88mm | ||
Width 2.4mm | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
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