Infineon CoolSiC N-Channel Power MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-LL IMTA65R075M2HXTMA1
- RS庫存編號:
- 762-923
- 製造零件編號:
- IMTA65R075M2HXTMA1
- 製造商:
- Infineon
N
可享批量折扣
查看批量定價選項小計（1 件）*
HK$38.90
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月14日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$38.90 |
| 10 - 49 | HK$31.50 |
| 50 - 99 | HK$24.10 |
| 100 + | HK$23.60 |
* 參考價格
- RS庫存編號:
- 762-923
- 製造零件編號:
- IMTA65R075M2HXTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 141W | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.2mm | |
| Width | 8.2mm | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 141W | ||
Maximum Operating Temperature 175°C | ||
Length 8.2mm | ||
Width 8.2mm | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
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