Vishay TrenchFET P-Channel Automotive MOSFET, -4.4 A, 60 V MOSFET, 8-Pin SO-8 SQ4961CEY-T1_GE3
- RS庫存編號:
- 790-420
- 製造零件編號:
- SQ4961CEY-T1_GE3
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 10 件）*
HK$75.49
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年2月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | HK$7.549 | HK$75.49 |
| 100 - 490 | HK$4.679 | HK$46.79 |
| 500 - 990 | HK$3.629 | HK$36.29 |
| 1000 + | HK$2.446 | HK$24.46 |
* 參考價格
- RS庫存編號:
- 790-420
- 製造零件編號:
- SQ4961CEY-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | -4.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | MOSFET | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.3W | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id -4.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode MOSFET | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.3W | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET offers high performance in automotive applications, featuring a dual P-channel configuration designed to effectively manage voltage up to 60V while operating in extreme temperature conditions of 175 °C.
AEC Q101 qualified for automotive reliability
100% R and UIS testing ensures consistent operation
Dual P-channel configuration increases design flexibility
Low on-state resistance enhances energy efficiency
相关链接
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 8-Pin PowerPAK SO-8L SQJ114EP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3
- Vishay TrenchFET Dual N-Channel Automotive MOSFET 60 V MOSFET, 4-Pin PowerPAK SO-8L SQJ768ELP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 4-Pin PowerPAK SO-8L SQJ112EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3
- Vishay TrenchFET P-Channel Automotive MOSFET 30 V MOSFET, 8-Pin PowerPAK 1212-8SLW SQS135ELNW-T1_GE3