Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3
- RS庫存編號:
- 178-3873
- 製造零件編號:
- SQJ431AEP-T1_GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$126.80
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 8,090 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | HK$12.68 | HK$126.80 |
| 750 - 1490 | HK$12.38 | HK$123.80 |
| 1500 + | HK$12.17 | HK$121.70 |
* 參考價格
- RS庫存編號:
- 178-3873
- 製造零件編號:
- SQJ431AEP-T1_GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 760mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 760mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.07mm | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
相关链接
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