製造零件編號

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8

RS庫存編號:: 178-3718
製造零件編號:: SQJ431AEP-T1_GE3
製造商:: Vishay Siliconix

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

HK$16,602.00

訂單超過 HK$250.00 免費送貨

最後的 RS 庫存

最終 9,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	HK$5.534	HK$16,602.00
15000 +	HK$5.423	HK$16,269.00

* 參考價格

RS庫存編號:: 178-3718
製造零件編號:: SQJ431AEP-T1_GE3
製造商:: Vishay Siliconix

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	200V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	760mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	55nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	1.07mm
	Width	5 mm
	Standards/Approvals	No
	Length	5.99mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay Siliconix
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 200V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 760mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 55nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 1.07mm
	Width 5 mm
	Standards/Approvals No
	Length 5.99mm
	Automotive Standard AEC-Q101

Datasheet

豁免

COO (Country of Origin):: CN

TrenchFET® power MOSFET

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8

訂單超過 HK$250.00 免費送貨

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