Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8 SQJ211ELP-T1_GE3
- RS庫存編號:
- 228-2959
- 製造零件編號:
- SQJ211ELP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$89.40
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 2,765 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$17.88 | HK$89.40 |
| 50 - 95 | HK$17.34 | HK$86.70 |
| 100 - 245 | HK$16.80 | HK$84.00 |
| 250 - 995 | HK$16.34 | HK$81.70 |
| 1000 + | HK$15.82 | HK$79.10 |
* 參考價格
- RS庫存編號:
- 228-2959
- 製造零件編號:
- SQJ211ELP-T1_GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | -0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf -0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive P-channel is 100 V power MOSFET.
100 % Rg and UIS tested
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