Vishay TrenchFET Gen IV N channel-Channel MOSFET, 461 A, 60 V N, 8-Pin PowerPAK 10 x 12 SIJK4610-T1-GE3
- RS庫存編號:
- 790-428
- 製造零件編號:
- SIJK4610-T1-GE3
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 50 件）*
HK$4,068.90
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月13日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 50 - 450 | HK$81.378 | HK$4,068.90 |
| 500 - 2450 | HK$50.574 | HK$2,528.70 |
| 2500 - 4950 | HK$39.01 | HK$1,950.50 |
| 5000 + | HK$37.84 | HK$1,892.00 |
* 參考價格
- RS庫存編號:
- 790-428
- 製造零件編號:
- SIJK4610-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 461A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0012Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 12mm | |
| Standards/Approvals | RoHS | |
| Width | 10mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 461A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0012Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 12mm | ||
Standards/Approvals RoHS | ||
Width 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N Channel MOSFET delivers superior performance for various applications. With a robust design, it minimises power loss and offers exceptional conduction efficiency, making it Ideal for power management systems.
Operating voltage rating of 60 V enhances system reliability
Features low on-state resistance for reduced power dissipation
Kelvin connection significantly lowers gate noise interference
Robust continuous drain current capability of 77 A ensures optimal performance
相关链接
- Vishay TrenchFET Gen IV N channel-Channel MOSFET 80 V N, 8-Pin PowerPAK 10 x 12 SIJK4810-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3