Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8 SIJ150DP-T1-GE3

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  • 2027年6月22日 發貨
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RS庫存編號:
200-6841
製造零件編號:
SIJ150DP-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Length

3.4mm

Height

3.4mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low Qg and Qoss reduce power loss and improve efficiency

Flexible leads provide resilience to mechanical stress

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

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