Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 200-6797
- 製造零件編號:
- Si4425FDY-T1-GE3
- 製造商:
- Vishay
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小計（1 包，共 50 件）*
HK$229.50
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- 6,650 件從 2026年6月01日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | HK$4.59 | HK$229.50 |
| 750 - 1450 | HK$4.474 | HK$223.70 |
| 1500 + | HK$4.406 | HK$220.30 |
* 參考價格
- RS庫存編號:
- 200-6797
- 製造零件編號:
- Si4425FDY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.8W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.8W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Si4425FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET.
TrenchFET Gen IV p-channel power MOSFET
100% Rg tested
相关链接
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3
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