Vishay TrenchFET Gen IV Type N-Channel MOSFET, 92.5 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 200-6855
- 製造零件編號:
- SiSS22LDN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
HK$192.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年7月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | HK$7.68 | HK$192.00 |
| 750 - 1475 | HK$7.488 | HK$187.20 |
| 1500 + | HK$7.376 | HK$184.40 |
* 參考價格
- RS庫存編號:
- 200-6855
- 製造零件編號:
- SiSS22LDN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 92.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 3.3mm | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 92.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 3.3mm | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Automotive Standard No | ||
The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
相关链接
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212