Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 200-6849
- 製造零件編號:
- SiSS63DN-T1-GE3
- 製造商:
- Vishay
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HK$315.10
訂單超過 HK$250.00 免費送貨
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- 從 2027年1月12日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | HK$6.302 | HK$315.10 |
| 750 - 1450 | HK$6.146 | HK$307.30 |
| 1500 + | HK$6.05 | HK$302.50 |
* 參考價格
- RS庫存編號:
- 200-6849
- 製造零件編號:
- SiSS63DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 127.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET Gen III | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 236nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 127.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET Gen III | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 236nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 3.3mm | ||
Automotive Standard No | ||
The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.
TrenchFET Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested
相关链接
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