Vishay TrenchFET Gen IV Type N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8
- RS庫存編號:
- 180-7361
- 製造零件編號:
- SIS476DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$13,440.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年6月25日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$4.48 | HK$13,440.00 |
| 6000 - 9000 | HK$4.346 | HK$13,038.00 |
| 12000 + | HK$4.215 | HK$12,645.00 |
* 參考價格
- RS庫存編號:
- 180-7361
- 製造零件編號:
- SIS476DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0035Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Height | 1.12mm | |
| Length | 3.61mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0035Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Height 1.12mm | ||
Length 3.61mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIS476DN is a N-channel MOSFET having drain to source(Vds) voltage of 30V. The gate to source voltage(VGS) is 20V. It is having Power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.0025ohms at 10VGS and 0.0035ohms at 4.5VGS. Maximum drain current 40A.
Trench FET gen IV power MOSFET
100 % Rg and UIS tested
相关链接
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