Vishay SISS N channel-Channel Single MOSFETs, 7 A, 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS4634LDN-T1-GE3
- RS庫存編號:
- 829-347
- 製造零件編號:
- SISS4634LDN-T1-GE3
- 製造商:
- Vishay
N
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HK$4.58
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- 從 2027年9月13日 發貨
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|---|---|
| 1 - 24 | HK$4.58 |
| 25 - 99 | HK$3.02 |
| 100 - 499 | HK$1.79 |
| 500 + | HK$1.68 |
* 參考價格
- RS庫存編號:
- 829-347
- 製造零件編號:
- SISS4634LDN-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SISS | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0285Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 19.8W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.30mm | |
| Width | 3.30mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SISS | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0285Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 19.8W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 3.30mm | ||
Width 3.30mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay cutting-edge N-Channel MOSFET designed for efficient power management. It excels in reducing switching-related power loss while providing robust performance across various applications.
Features TrenchFET Gen IV technology for enhanced efficiency
Fully lead-free device ensures environmental compliance
Optimised charge characteristics minimise energy losses
Comprehensive Rg and UIS testing guarantees reliability
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