製造零件編號

Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3

RS庫存編號:: 279-9994
製造零件編號:: SISS5110DN-T1-GE3
製造商:: Vishay

Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3

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小計（1 包，共 4 件）*

HK$61.20

訂單超過 HK$250.00 免費送貨

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單位	每單位	每包*
4 - 56	HK$15.30	HK$61.20
60 - 96	HK$11.475	HK$45.90
100 - 236	HK$10.20	HK$40.80
240 - 996	HK$10.00	HK$40.00
1000 +	HK$9.75	HK$39.00

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RS庫存編號:: 279-9994
製造零件編號:: SISS5110DN-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	55.9A
	Maximum Drain Source Voltage Vds	100V
	Series	SISS
	Package Type	1212-8S
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0126Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	56.8W
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.3mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 55.9A
	Maximum Drain Source Voltage Vds 100V
	Series SISS
	Package Type 1212-8S
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0126Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 56.8W
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.3mm
	Automotive Standard No

Datasheet - SISS5110DN-T1-GE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3

訂單超過 HK$250.00 免費送貨

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