Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3
- RS庫存編號:
- 279-9988
- 製造零件編號:
- SISS4409DN-T1-GE3
- 製造商:
- Vishay
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HK$81.60
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 45 | HK$16.32 | HK$81.60 | - |
| 50 - 95 | HK$12.24 | HK$61.20 | 25% |
| 100 - 245 | HK$10.88 | HK$54.40 | 33% |
| 250 - 995 | HK$10.68 | HK$53.40 | 34% |
| 1000 + | HK$10.44 | HK$52.20 | 36% |
* 參考價格
- RS庫存編號:
- 279-9988
- 製造零件編號:
- SISS4409DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SISS | |
| Package Type | 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 56.8W | |
| Typical Gate Charge Qg @ Vgs | 126nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SISS | ||
Package Type 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 56.8W | ||
Typical Gate Charge Qg @ Vgs 126nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
相关链接
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