Silicon N-Channel MOSFET, 55.9 A, 100 V, 8-Pin 1212-8S Vishay SISS5110DN-T1-GE3
- RS庫存編號:
- 279-9993
- 製造零件編號:
- SISS5110DN-T1-GE3
- 製造商:
- Vishay
可供預購。
單價 个（每带 3000 ）
HK$10.034
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | HK$10.034 | HK$30,102.00 |
* 參考價格
- RS庫存編號:
- 279-9993
- 製造零件編號:
- SISS5110DN-T1-GE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55.9 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | 1212-8S |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Channel Mode | Enhancement |
| Transistor Material | Silicon |
| Number of Elements per Chip | 1 |