Vishay SQD P-Channel Single MOSFETs, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3
- RS庫存編號:
- 829-350
- 製造零件編號:
- SQD50P04-13L_NE3
- 製造商:
- Vishay
N
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HK$14.85
訂單超過 HK$250.00 免費送貨
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- 從 2027年3月09日 發貨
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|---|---|
| 1 - 9 | HK$14.85 |
| 10 - 24 | HK$9.60 |
| 25 - 99 | HK$5.70 |
| 100 - 499 | HK$5.58 |
| 500 + | HK$5.47 |
* 參考價格
- RS庫存編號:
- 829-350
- 製造零件編號:
- SQD50P04-13L_NE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | SQD | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.013Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.5mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series SQD | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.013Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.5mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET provides high-performance switching capabilities, specifically designed for automotive applications, ensuring reliability and efficiency under demanding conditions.
TrenchFET technology enhances power efficiency
Low thermal resistance enables effective heat management
Robust AEC-Q101 qualification assures high-quality performance
100% Rg and UIS tested for reliability in operation
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