Vishay SQJ P-Channel Single MOSFETs, -36 A, -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- RS庫存編號:
- 829-353
- 製造零件編號:
- SQJ457EP-T1_NE3
- 製造商:
- Vishay
N
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HK$11.39
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- 從 2027年3月09日 發貨
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|---|---|
| 1 - 9 | HK$11.39 |
| 10 - 24 | HK$7.37 |
| 25 - 99 | HK$4.36 |
| 100 + | HK$4.24 |
* 參考價格
- RS庫存編號:
- 829-353
- 製造零件編號:
- SQJ457EP-T1_NE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -36A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | SQJ | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 4.9mm | |
| Height | 1.04mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -36A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series SQJ | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 4.9mm | ||
Height 1.04mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET offers reliable performance for automotive applications, providing efficient switching and high thermal conductivity to ensure robust operation under various conditions.
AEC-Q101 qualified for automotive applications
TrenchFET technology enhances efficiency and reduces power loss
On-state resistance at -10V gate voltage is 0.0250 Ohm
Continuous drain current rated at -36A for high-performance applications
相关链接
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