Vishay SISS N channel-Channel Single MOSFETs, 14.2 A, 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- RS庫存編號:
- 829-345
- 製造零件編號:
- SISS110DN-T1-GE3
- 製造商:
- Vishay
N
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HK$5.00
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- 從 2027年9月13日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 24 | HK$5.00 |
| 25 - 99 | HK$4.90 |
| 100 + | HK$4.80 |
* 參考價格
- RS庫存編號:
- 829-345
- 製造零件編號:
- SISS110DN-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SISS | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 24W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.30mm | |
| Width | 3.30mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SISS | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 24W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 3.30mm | ||
Width 3.30mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET delivers efficient power management solutions with excellent conduction capabilities. Designed for demanding applications, it offers superior switching and thermal performance.
Features TrenchFET Gen IV technology for superior efficiency and performance
Guaranteed 100% RDS(on) and UIS tested for reliability in operation
Continuous drain current rating of 11 A ensures robust delivery
Optimised for low RDS(on) values, enhancing thermal performance
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