Vishay SI N channel-Channel Single MOSFETs, 6 A, 30 V Enhancement Mode, 8-Pin TSOP-6 SI7804BDN-T1-GE3
- RS庫存編號:
- 829-361
- 製造零件編號:
- SI7804BDN-T1-GE3
- 製造商:
- Vishay
N
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HK$2.30
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- 從 2027年9月13日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 24 | HK$2.30 |
| 25 - 99 | HK$2.20 |
| 100 + | HK$2.10 |
* 參考價格
- RS庫存編號:
- 829-361
- 製造零件編號:
- SI7804BDN-T1-GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP-6 | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0192Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 19.9W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.07mm | |
| Width | 3.30mm | |
| Length | 3.30mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP-6 | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0192Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 19.9W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.07mm | ||
Width 3.30mm | ||
Length 3.30mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient DC/DC conversion and system power applications, ensuring reliable operation within specified voltage limits.
TrenchFET Gen III technology enhances efficiency and performance
Guaranteed 100% R testing ensures high reliability
Material categorised for compliance, supporting environmental regulations
Maximum continuous drain current of 6A boosts versatility
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