Vishay TrenchFET N-Channel Single MOSFETs, 2.5 A, 20 V Enhancement Mode, 6-Pin TSOP-6 SI3552BDV-T1-GE3
- RS庫存編號:
- 847-934
- 製造零件編號:
- SI3552BDV-T1-GE3
- 製造商:
- Vishay
N
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HK$1.90
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- 從 2027年9月13日 發貨
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|---|---|
| 1 - 24 | HK$1.90 |
| 25 - 99 | HK$1.23 |
| 100 - 499 | HK$0.78 |
| 500 + | HK$0.67 |
* 參考價格
- RS庫存編號:
- 847-934
- 製造零件編號:
- SI3552BDV-T1-GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | TSOP-6 | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.200Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.15W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.90mm | |
| Width | 1.60mm | |
| Standards/Approvals | RoHS3 Compliant | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type TSOP-6 | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.200Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.15W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.90mm | ||
Width 1.60mm | ||
Standards/Approvals RoHS3 Compliant | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET combines both N- and P-channel functionalities for efficient performance in various applications. This device maximises power efficiency while maintaining reliability in Compact spaces.
TrenchFET technology ensures low on-resistance for better efficiency
Offers a maximum drain-source voltage of 30 V for N-channel and -30 V for P-channel
Continuous drain current rated at up to 3.7 A for reliable operation
Leads are halogen-free, promoting environmental sustainability
Features a Compact TSOP-6 package for space-saving designs
相关链接
- Vishay SI N channel-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin TSOP-6 SI3410BDV-T1-GE3
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- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3
- Vishay Dual TrenchFET 2 Type N 3.9 A 6-Pin TSOP SI3585CDV-T1-GE3