Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP Si3129DV-T1-GE3
- RS庫存編號:
- 228-2817
- 製造零件編號:
- Si3129DV-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$128.90
訂單超過 HK$250.00 免費送貨
有庫存
- 2,875 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$5.156 | HK$128.90 |
| 50 - 75 | HK$5.00 | HK$125.00 |
| 100 - 225 | HK$4.852 | HK$121.30 |
| 250 - 975 | HK$4.70 | HK$117.50 |
| 1000 + | HK$4.56 | HK$114.00 |
* 參考價格
- RS庫存編號:
- 228-2817
- 製造零件編號:
- Si3129DV-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 82.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 4.2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 82.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 4.2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Vishay TrenchFET P-Channel power MOSFET is use for Power management of portable and consumer load switch and DC/DC converters.
100 % Rg and UIS tested
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