Vishay SI N channel-Channel Single MOSFETs, 3.4 A, 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- RS庫存編號:
- 829-363
- 製造零件編號:
- SIA432BDJ-T1-GE3
- 製造商:
- Vishay
N
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HK$1.90
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- 從 2027年9月13日 發貨
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|---|---|
| 1 - 24 | HK$1.90 |
| 25 - 99 | HK$1.23 |
| 100 - 499 | HK$0.78 |
| 500 + | HK$0.67 |
* 參考價格
- RS庫存編號:
- 829-363
- 製造零件編號:
- SIA432BDJ-T1-GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | P | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0192Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 2.05mm | |
| Width | 2.05mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type P | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0192Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 2.05mm | ||
Width 2.05mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management in various applications. Its robust construction enables reliable function under demanding conditions.
30 V drain-source voltage facilitates versatile application range
Max on-state resistance of 0.0192 Ohm at 10 V enhances power efficiency
Configured as a single device, optimising space and performance
Designed with TrenchFET technology for superior switching capabilities
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