Vishay SI N channel-Channel Single MOSFETs, 3.4 A, 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- RS庫存編號:
- 829-364
- 製造零件編號:
- SIR580DP-T1-UE3
- 製造商:
- Vishay
N
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HK$19.43
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- 從 2027年9月13日 發貨
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|---|---|
| 1 - 9 | HK$19.43 |
| 10 - 24 | HK$12.62 |
| 25 - 99 | HK$7.48 |
| 100 - 499 | HK$7.26 |
| 500 + | HK$7.15 |
* 參考價格
- RS庫存編號:
- 829-364
- 製造零件編號:
- SIR580DP-T1-UE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | P | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0192Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 37.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.15mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type P | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0192Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 37.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.15mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management. This Advanced component excels in roles requiring high levels of current handling and voltage regulation.
TrenchFET Gen V technology for superior efficiency
Low on-state resistance reduces power losses
Extensive testing for reliability, including UIS testing
Optimised for low R x Q figure-of-merit to enhance performance
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