Vishay SQM P-Channel Single MOSFETs, -93 A, -100 V Enhancement Mode, 3-Pin TO-263 SQM100P10-19L_NE3
- RS庫存編號:
- 829-357
- 製造零件編號:
- SQM100P10-19L_NE3
- 製造商:
- Vishay
N
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HK$39.98
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- 從 2027年3月10日 發貨
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|---|---|
| 1 - 9 | HK$39.98 |
| 10 - 49 | HK$24.79 |
| 50 - 99 | HK$15.08 |
| 100 + | HK$14.63 |
* 參考價格
- RS庫存編號:
- 829-357
- 製造零件編號:
- SQM100P10-19L_NE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -93A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | TO-263 | |
| Series | SQM | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0190Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.28mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 4.57mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -93A | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type TO-263 | ||
Series SQM | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0190Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 10.28mm | ||
Standards/Approvals RoHS Compliant | ||
Height 4.57mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET designed for automotive applications, offering efficient performance and high reliability. Its Advanced TrenchFET technology ensures optimal thermal management and effective switching capabilities.
TrenchFET technology enhances efficiency and thermal performance
Rated for a Drain-Source Voltage of -100 V, ensuring robust operation
Package designed for low thermal resistance for better heat dissipation
Tests show 100% R and UIS validation for high reliability
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