Vishay SQJ N-Channel Single MOSFETs, 95 A, 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
- RS庫存編號:
- 829-355
- 製造零件編號:
- SQJQ190ER-T1_GE3
- 製造商:
- Vishay
N
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HK$45.67
訂單超過 HK$250.00 免費送貨
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- 從 2027年2月17日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$45.67 |
| 10 - 49 | HK$28.36 |
| 50 - 99 | HK$17.20 |
| 100 + | HK$16.75 |
* 參考價格
- RS庫存編號:
- 829-355
- 製造零件編號:
- SQJQ190ER-T1_GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SQJ | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0143Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8mm | |
| Height | 1.04mm | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SQJ | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0143Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 8mm | ||
Height 1.04mm | ||
Length 8.1mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET offers exceptional performance in automotive applications, ensuring reliable operation under challenging conditions with robust thermal management capabilities for both performance and lifespan.
TrenchFET technology for enhanced efficiency
AEC-Q101 qualified for automotive industry reliability
Thin profile of 1.9 mm complements Compact designs
Maximum drain-source voltage of 200 V supports high-performance circuits
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