Vishay TrenchFET N channel-Channel Power MOSFET, 375 A, 60 V Enhancement Mode, 8-Pin PowerPAK SQJQ580E-T1_GE3
- RS庫存編號:
- 851-494
- 製造零件編號:
- SQJQ580E-T1_GE3
- 製造商:
- Vishay
N
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HK$57.50
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- 從 2027年4月12日 發貨
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|---|---|
| 1 - 9 | HK$57.50 |
| 10 - 49 | HK$55.80 |
| 50 - 99 | HK$54.10 |
| 100 + | HK$53.00 |
* 參考價格
- RS庫存編號:
- 851-494
- 製造零件編號:
- SQJQ580E-T1_GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Width | 5mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Width 5mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay automotive MOSFET is an Automotive N-Channel device designed for reliable power management. It excels in high-temperature conditions, ensuring efficient performance across diverse applications in the automotive sector.
TrenchFET Gen V technology enhances power efficiency
AEC-Q101 qualified for stringent automotive standards
Maximum drain-source voltage of 80 V ensures robust operation
Low on-state resistance delivers efficient performance
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