Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07CD3NG
- RS庫存編號:
- 854-512
- 製造零件編號:
- MSCSM330AM07CD3NG
- 製造商:
- Microchip
N
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小計（1 件）*
HK$9,545.80
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- 從 2027年2月24日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | HK$9,545.80 |
* 參考價格
- RS庫存編號:
- 854-512
- 製造零件編號:
- MSCSM330AM07CD3NG
- 製造商:
- Microchip
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1918W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type SiC Power Module | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1918W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module excels in high-performance applications, delivering exceptional voltage handling and continuous drain current capabilities for demanding environments.
Robust thermal reliability ensures optimal performance at elevated temperatures
Integrated Schottky diode provides zero reverse recovery, enhancing switching behaviour
Designed with a Kelvin source configuration for simplified gate driving
Compact, isolated package allows direct mounting to heatsinks
相关链接
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