Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3.3 kV Enhancement Mode MSCSM330DUM07D3NG

N

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HK$7,794.00

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RS庫存編號:
854-517
製造零件編號:
MSCSM330DUM07D3NG
製造商:
Microchip
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品牌

Microchip

Product Type

SiC Power Module

Channel Type

N

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3.3kV

Series

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

1918W

Minimum Operating Temperature

-40°C

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip silicon carbide power module designed for high-performance applications, delivering dual common source functionality with exceptional reliability under challenging conditions. This device effectively manages high voltage and current requirements.

Kelvin source simplifies gate drive, enhancing performance

Designed for high thermal performance with low junction-to-case thermal resistance

RoHS compliant, ensuring environmental safety

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