Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07D3NG
- RS庫存編號:
- 854-517
- 製造零件編號:
- MSCSM330DUM07D3NG
- 製造商:
- Microchip
N
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小計（1 件）*
HK$7,794.00
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- 從 2027年2月24日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | HK$7,794.00 |
* 參考價格
- RS庫存編號:
- 854-517
- 製造零件編號:
- MSCSM330DUM07D3NG
- 製造商:
- Microchip
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | N channel | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 1918W | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type N channel | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 1918W | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module designed for high-performance applications, delivering dual common source functionality with exceptional reliability under challenging conditions. This device effectively manages high voltage and current requirements.
Kelvin source simplifies gate drive, enhancing performance
Designed for high thermal performance with low junction-to-case thermal resistance
RoHS compliant, ensuring environmental safety
相关链接
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