Vishay SiSS N-Channel MOSFET, 50.3 A, 80 V N, 8-Pin 1212-8S SISS32ADN-T1-UE3
- RS庫存編號:
- 878-901
- 製造零件編號:
- SISS32ADN-T1-UE3
- 製造商:
- Vishay
N
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HK$16.75
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膠帶 | 每膠帶 | 節省 |
|---|---|---|
| 1 - 9 | HK$16.75 | - |
| 10 - 24 | HK$10.94 | HK$58.10 |
| 25 - 99 | HK$6.48 | HK$256.75 |
| 100 - 499 | HK$6.25 | HK$1,050.00 |
| 500 + | HK$6.14 | HK$5,305.00 |
* 參考價格
- RS庫存編號:
- 878-901
- 製造零件編號:
- SISS32ADN-T1-UE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | 1212-8S | |
| Series | SiSS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0087Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 65.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 830μm | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type 1212-8S | ||
Series SiSS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0087Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 65.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 150°C | ||
Height 830μm | ||
Width 3.4mm | ||
Length 3.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay semiconductor is a robust N-Channel MOSFET designed for efficient power management, featuring low on-state resistance and enhanced thermal performance for demanding operational environments.
TrenchFET Gen IV technology offers superior efficiency
Very low RDS(on) reduces power loss during operation
Gate-source threshold voltage guarantees reliable switching
Extensive temperature range ensures operation in various conditions
Package design allows for simplified integration in circuit layouts
相关链接
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