Vishay TrenchFET P-Channel MOSFET, -101.4 A, -40 V Enhancement, 8-Pin PowerPAK SIR4407DP-T1-UE3
- RS庫存編號:
- 904-975
- 製造零件編號:
- SIR4407DP-T1-UE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 組，共 1 件）*
HK$12.51
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年11月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | HK$12.51 |
| 10 - 24 | HK$8.15 |
| 25 - 99 | HK$4.80 |
| 100 - 499 | HK$4.69 |
| 500 + | HK$4.58 |
* 參考價格
- RS庫存編號:
- 904-975
- 製造零件編號:
- SIR4407DP-T1-UE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -101.4A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 82.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 88.3W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ROHS | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -101.4A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 82.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 88.3W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ROHS | ||
Width 5.15mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay P-Channel MOSFET serves as a reliable electronic switch, designed to manage high voltage and current efficiently. It is specifically engineered for various power management applications, ensuring robust performance in demanding environments.
Operates at a drain-source voltage of -40 V for enhanced reliability
Ultra-low on-state resistance ensures minimal power loss during operation
Fully tested for R and UIS to guarantee performance under stressed conditions
Offers a maximum power dissipation rating of 5.0 W, allowing for cooler operation
相关链接
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5207DN-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5203DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5205DP-T1-UE3
- Vishay TrenchFET N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-UE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5404DP-T1-UE3