Vishay TrenchFET N-Channel MOSFET, 208 A, 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-UE3

N

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RS庫存編號:
904-977
製造零件編號:
SIR608DP-T1-UE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

208A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

PowerPAK

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0012Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

50.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

ROHS

Width

5.15mm

Length

6.15mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay power MOSFET designed for efficient performance in high power applications, offering reliable management of drain-source voltage and current. It plays a Crucial role in enhancing energy efficiency in electronic systems.

N-Channel design for optimised conductivity and performance

Maximum drain-source voltage rating of 45 V ensures robust operation

Low on-state resistance improves power efficiency and thermal performance

Integrated with avalanche rating to safeguard against excessive voltage spikes

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