Vishay TrenchFET N-Channel MOSFET, 330 A, 60 V Enhancement, 8-Pin PowerPAK SIRS4614EPW-T1-RE3
- RS庫存編號:
- 904-978
- 製造零件編號:
- SIRS4614EPW-T1-RE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 組，共 1 件）*
HK$28.92
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年11月17日 發貨
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膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | HK$28.92 |
| 10 - 24 | HK$18.76 |
| 25 - 99 | HK$11.17 |
| 100 - 499 | HK$10.83 |
| 500 + | HK$10.61 |
* 參考價格
- RS庫存編號:
- 904-978
- 製造零件編號:
- SIRS4614EPW-T1-RE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.000995Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 205W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | ROHS | |
| Width | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.000995Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 205W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals ROHS | ||
Width 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET designed for high-efficiency operations, specifically tackling power losses associated with conduction in electronic applications. This component is characterised by its robust construction and durability under varying conditions.
TrenchFET Gen IV technology ensures excellent performance with minimal power loss
Rated for a drain-source voltage of 60 V, providing stability in high-voltage environments
Low on-state resistance maximises efficiency in power management applications
Designed with enhanced power dissipation capabilities for reduced thermal issues
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