ROHM RUR020N02 N-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin TSMT RUR020N02TL
- RS庫存編號:
- 124-6841
- 製造零件編號:
- RUR020N02TL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$102.10
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 100 | HK$4.084 | HK$102.10 |
| 125 - 225 | HK$4.012 | HK$100.30 |
| 250 - 600 | HK$3.916 | HK$97.90 |
| 625 - 1225 | HK$3.812 | HK$95.30 |
| 1250 + | HK$3.716 | HK$92.90 |
* 參考價格
- RS庫存編號:
- 124-6841
- 製造零件編號:
- RUR020N02TL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSMT | |
| Series | RUR020N02 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | -10V, +10V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 950μm | |
| Width | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSMT | ||
Series RUR020N02 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs -10V, +10V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 950μm | ||
Width 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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