ROHM RUR040N02 N-Channel MOSFET, 4 A, 20 V Enhancement, 3-Pin TSMT RUR040N02TL
- RS庫存編號:
- 826-7813
- 製造零件編號:
- RUR040N02TL
- 製造商:
- ROHM
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
HK$93.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 20 | HK$4.65 | HK$93.00 |
| 40 - 80 | HK$4.51 | HK$90.20 |
| 100 - 180 | HK$4.37 | HK$87.40 |
| 200 - 380 | HK$4.28 | HK$85.60 |
| 400 + | HK$4.185 | HK$83.70 |
* 參考價格
- RS庫存編號:
- 826-7813
- 製造零件編號:
- RUR040N02TL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSMT | |
| Series | RUR040N02 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10V, +10V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.6mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 800μm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSMT | ||
Series RUR040N02 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10V, +10V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Width 1.6mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 800μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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