Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
- RS庫存編號:
- 125-0528
- 製造零件編號:
- TK100E06N1,S1X(S
- 製造商:
- Toshiba
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$74.10
訂單超過 HK$250.00 免費送貨
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- 5 件準備從其他地點送貨
- 加上 75 件從 2026年6月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | HK$14.82 | HK$74.10 |
| 25 - 45 | HK$14.46 | HK$72.30 |
| 50 - 120 | HK$14.08 | HK$70.40 |
| 125 - 245 | HK$13.74 | HK$68.70 |
| 250 + | HK$13.40 | HK$67.00 |
* 參考價格
- RS庫存編號:
- 125-0528
- 製造零件編號:
- TK100E06N1,S1X(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | U-MOSVIII-H | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series U-MOSVIII-H | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 15.1mm | ||
Length 10.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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