Toshiba U-MOSVIII-H Type N-Channel MOSFET, 148 A, 100 V Enhancement, 3-Pin TO-220 TK65E10N1,S1X(S
- RS庫存編號:
- 799-5185
- 製造零件編號:
- TK65E10N1,S1X(S
- 製造商:
- Toshiba
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$142.10
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年9月24日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | HK$28.42 | HK$142.10 |
| 25 - 120 | HK$27.58 | HK$137.90 |
| 125 - 245 | HK$26.72 | HK$133.60 |
| 250 - 495 | HK$26.14 | HK$130.70 |
| 500 + | HK$25.58 | HK$127.90 |
* 參考價格
- RS庫存編號:
- 799-5185
- 製造零件編號:
- TK65E10N1,S1X(S
- 製造商:
- Toshiba
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 148A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | U-MOSVIII-H | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 148A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series U-MOSVIII-H | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.1mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
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