Infineon CoolMOS CE N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1

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RS庫存編號:
130-0916
製造零件編號:
IPN50R950CEATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

6.6A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.5nC

Maximum Gate Source Voltage Vgs

-30V, +30V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

830mV

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.7mm

Height

1.7mm

Length

6.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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