Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1
- RS庫存編號:
- 914-0227
- Distrelec 貨號:
- 304-44-440
- 製造零件編號:
- IPP50R190CEXKSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 10 件）*
HK$120.60
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 400 件從 2026年6月08日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$12.06 | HK$120.60 |
| 20 - 20 | HK$11.76 | HK$117.60 |
| 30 + | HK$11.58 | HK$115.80 |
* 參考價格
- RS庫存編號:
- 914-0227
- Distrelec 貨號:
- 304-44-440
- 製造零件編號:
- IPP50R190CEXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18.5A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Typical Gate Charge Qg @ Vgs | 47.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18.5A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Typical Gate Charge Qg @ Vgs 47.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
相关链接
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