IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227
- RS庫存編號:
- 146-4386
- Distrelec 貨號:
- 302-53-382
- 製造零件編號:
- IXFN90N85X
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
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小計（1 件）*
HK$470.00
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單位 | 每單位 |
|---|---|
| 1 - 2 | HK$470.00 |
| 3 - 4 | HK$458.20 |
| 5 + | HK$451.20 |
* 參考價格
- RS庫存編號:
- 146-4386
- Distrelec 貨號:
- 302-53-382
- 製造零件編號:
- IXFN90N85X
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | SOT-227 | |
| Series | HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.2kW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 340nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Width | 25.07 mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type SOT-227 | ||
Series HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.2kW | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 340nC | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Width 25.07 mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
相关链接
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X
- IXYS HiperFET 90 A 4-Pin SOT-227 IXFN110N60P3
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227