IXYS HiperFET N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

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額外添加20件可節省HK$304.00

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小計(1 管,共 10 件)*

HK$7,602.50

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每單位
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10 - 10HK$760.25HK$7,602.50-
20 - 90HK$745.05HK$7,450.50HK$304.00
100 +HK$730.14HK$7,301.40HK$3,011.00

* 參考價格

RS庫存編號:
168-4473
製造零件編號:
IXFN36N100
製造商:
IXYS
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品牌

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

700W

Typical Gate Charge Qg @ Vgs

380nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.42mm

Length

38.23mm

Standards/Approvals

No

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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