IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227

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RS庫存編號:
146-4398
Distrelec 貨號:
302-53-364
製造零件編號:
IXFN150N65X2
製造商:
IXYS
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品牌

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

145A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-227

Series

HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

335nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1.04kW

Maximum Operating Temperature

150°C

Width

25.07 mm

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

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