Infineon Isolated HEXFET 2 N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF
- RS庫存編號:
- 165-5940
- 製造零件編號:
- IRF7380TRPBF
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 卷，共 4000 件）*
HK$15,612.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月30日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 16000 | HK$3.903 | HK$15,612.00 |
| 20000 + | HK$3.825 | HK$15,300.00 |
* 參考價格
- RS庫存編號:
- 165-5940
- 製造零件編號:
- IRF7380TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF
This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its Advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.
Features & Benefits
• Industry-standard SO-8 package ensures compatibility across different vendors
• Low Rds(on) of 73mΩ optimises efficiency in power applications
• Enhancement mode operation enhances performance characteristics
• Low gate charge of 15nC facilitates quicker switching speeds
• Maximum drain-source voltage of 80V accommodates high power needs
• RoHS compliant and halogen-free promotes environmental safety
Applications
• Used in high frequency DC-DC converters for power regulation
• Effective in battery management systems that require low power loss
• Suitable for motor controllers needing efficient switching performance
• Employed in power supply units to improve overall efficiency
• Appropriate for driving inductive loads like relays and solenoids
What are the implications of the maximum continuous drain current?
The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.
How does the low Rds(on) affect performance?
The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.
What is the significance of its temperature ratings?
Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.
Can this component be directly mounted on PCBs?
Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in Compact designs.
How does the gate threshold voltage influence its operation?
With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.
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