Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC Infineon IRF7103TRPBF
- RS庫存編號:
- 831-2865
- 製造零件編號:
- IRF7103TRPBF
- 製造商:
- Infineon
可享批量折扣
Price 个（每托盘 20 ）**
HK$4.695
60 現貨庫存，可於3工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 | 每包** |
|---|---|---|
| 20 - 980 | HK$4.695 | HK$93.90 |
| 1000 - 1980 | HK$4.575 | HK$91.50 |
| 2000 + | HK$4.505 | HK$90.10 |
** 參考價格
- RS庫存編號:
- 831-2865
- 製造零件編號:
- IRF7103TRPBF
- 製造商:
- Infineon
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF
This MOSFET is designed for efficient performance across various applications. Its durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.
Features & Benefits
• Low Rds(on) of 200mΩ for improved efficiency
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space
Applications
• Used in power supply designs for energy-efficient operation
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components
What is the recommended operating temperature range for this component?
The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does one determine the suitable gate voltage for optimal performance?
The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.
What safety precautions should be taken when using this device?
It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.
Can it be used in circuits requiring fast switching?
Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.
Is this MOSFET compatible with standard PCB layouts?
The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Voltage | 50 V |
| Series | HEXFET |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 200 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Length | 5mm |
| Width | 4mm |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |